Technical Specifications
Transient Signal Technologies
advanced materials metrology
Electrical Metrology
Current-Voltage Measurements
I-V, p-n junction, GaAs
I-V, QWrs solar cells
I-V, semilog scale
I-V, p-n junction, GaAs
1/3
-
as a function of temperature (77K - 500K)
-
contact resistance measurements
-
metal contacts optimization
-
conduction mechanisms understanding
Hall Effect Measurements
Mobility vs. temperature, scattering mechanisms
Temperature dependent Hall effect
Shubnikov-de-Haas effect
Mobility vs. temperature, scattering mechanisms
1/3
-
as a function of temperature (77K - 500K)
-
mobility, carrier density measurements
-
type of carriers measurements
-
identification of shallow donors/acceptors
-
conduction mechanisms understanding
-
scattering mechanisms understanding
-
magnetoresistance measurements
-
Hall effect under light excitations
Deep Level Noise Spectroscopy
-
as a function of temperature (77K - 500K)
-
noise spectra as a function of bias current
-
contact noise measurements
-
bulk noise measurements
-
defects probing: activation energy, defects density, capture cross section
Noise Spectrum
Noise spectra vs. frequency and temperature
Activation energy
Noise Spectrum
1/3