Transient Signal Technologies

as a function of temperature (10K - 300K)

as a function of laser excitation wavelength (532 nm, 750 nm - 900 nm)

as a function of laser excitation intensity

material quality evaluation

band structure and radiative recombination processes understanding

material uniformity across the wafer

as a function of temperature (10K - 300K)

as a function of laser excitation wavelength (750 nm - 850 nm)

as a function of laser excitation intensity

PL decay time (20 ps - 2.5 ns)

carrier lifetime measurements

understanding of carrier recombination phenomena