Technical Specifications
Transient Signal Technologies
advanced materials metrology
Optical Metrology
Photoluminescence
PL vs. InGaAs coverage
PL: transition from 2D to 1D system
PL vs. InGaAs coverage
1/2
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as a function of temperature (10K - 300K)
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as a function of laser excitation wavelength (532 nm, 750 nm - 900 nm)
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as a function of laser excitation intensity
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material quality evaluation
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band structure and radiative recombination processes understanding
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material uniformity across the wafer
Time-Resolved Photoluminescence

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as a function of temperature (10K - 300K)
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as a function of laser excitation wavelength (750 nm - 850 nm)
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as a function of laser excitation intensity
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PL decay time (20 ps - 2.5 ns)
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carrier lifetime measurements
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understanding of carrier recombination phenomena